Formation mechanism of porous silicon layers obtained by anodization of monocrystalline n-type silicon in HF solutionsDUBIN, V. M.Surface science. 1992, Vol 274, Num 1, pp 82-92, issn 0039-6028Article

Electroless Ni-P deposition on silicon with Pd activationDUBIN, V. M.Journal of the Electrochemical Society. 1992, Vol 139, Num 5, pp 1289-1294, issn 0013-4651Article

Selective electroless Ni-Cu(P) deposition for via hole filling and conductor pattern cladding in VLSI multilevel interconnection structuresDUBIN, V. M.Journal of the Electrochemical Society. 1992, Vol 139, Num 2, pp 633-638, issn 0013-4651Article

Rôle of dielectric effects in the red-green switching of porous silicon luminescenceCHAZALVIEL, J.-N; OZANAM, F; DUBIN, V. M et al.Journal de physique. I. 1994, Vol 4, Num 9, pp 1325-1339, issn 1155-4304Article

Modulated infrared spectroscopy at the electrochemical interfaceCHAZALVIEL, J.-N; DUBIN, V. M; MANDAL, K. C et al.Applied spectroscopy. 1993, Vol 47, Num 9, pp 1411-1416, issn 0003-7028Conference Paper

In situ photoluminescence and photomodulated infrared study of porous silicon during etching and in ambientDUBIN, V. M; CHAZALVIEL, J.-N; OZANAM, F et al.Journal of luminescence. 1993, Vol 57, Num 1-6, pp 61-65, issn 0022-2313Article

Electrochemical materials and processes in Si integrated circuit technologyDUBIN, V. M; AKOLKAR, R; CHENG, C. C et al.Electrochimica acta. 2007, Vol 52, Num 8, pp 2891-2897, issn 0013-4686, 7 p.Conference Paper

Selective and blanket electroless copper deposition for ultralarge scale integrationDUBIN, V. M; SHACHAM-DIAMAND, Y; ZHAO, B et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 3, pp 898-908, issn 0013-4651Article

In situ luminescence and IR study of porous silicon during and after anodic oxidationDUBIN, V. M; OZANAM, F; CHAZALVIEL, J.-N et al.Thin solid films. 1995, Vol 255, Num 1-2, pp 87-91, issn 0040-6090Conference Paper

Preparation and characterization of surface-modified luminescent porous siliconDUBIN, V. M; VIEILLARD, C; OZNAM, F et al.Physica status solidi. B. Basic research. 1995, Vol 190, Num 1, pp 47-52, issn 0370-1972Conference Paper

Selective electroless Ni deposition onto Pd-activated Si for integrated circuit fabricationDUBIN, V. M; LOPATIN, S. D; SOKOLOV, V. G et al.Thin solid films. 1993, Vol 226, Num 1, pp 94-98, issn 0040-6090Article

Etude des propriétés superficielles du silicium poreux obtenu par traitement anodique dans une solution aqueuse HFKURMASHEV, V. I; TABULINA, L. V; DUBIN, V. M et al.Žurnal prikladnoj himii. 1985, Vol 58, Num 7, pp 1478-1481, issn 0044-4618Article

Thin electroless barrier for copper filmsLOPATIN, S. D; SHACHAM-DIAMAND, Y. Y; DUBIN, V. M et al.SPIE proceedings series. 1998, pp 65-77, isbn 0-8194-2967-8Conference Paper

Copper electroless deposition technology for ultra-large-scale-integration (ULSI) metallizationSHACHAM-DIAMAND, Y; DUBIN, V. M.Microelectronic engineering. 1997, Vol 33, Num 1-4, pp 47-58, issn 0167-9317Conference Paper

Selective electroless Ni deposition on a TiW underlayer for integrated circuit fabricationDUBIN, V. M; LOPATIN, S. D; SOKOLOV, V. G et al.Thin solid films. 1993, Vol 226, Num 1, pp 87-93, issn 0040-6090Article